Patterned Preparation And Application Of Aao Template Constant Current

The article adopts the constant current density to prepare anodic aluminum oxide (AAO) template with different diameter in different solution of the oxalic acid and the phosphor acid.The diameter and thickness will accrete with the increasing current density in different acid.They will be bigger with the increasing oxidation time,while the regularity will be better.Though regularity will be worse after the current density getting a high value,the whole quality is good.Determine the best of conditions is:AAO prepared with the constant current density of 8mA in the oxalic acid.In this passage,the steady photoetching technology of BP-212 positive photoresist is researched.BP-212 positive photoresist is used in patterning aluminum plate,glass and anodic aluminum oxide(AAO) templates.The best photoetching technology conditions are fllowing:the spin photoresist volume is 0.2ml;the low rolling speed is 600r/min and spinning 5second;the high rolling speed is 2500r/min and spinning 30second;the time of preceding drying is 15 minute;the time of exposure is 50 second;the time of after drying is 15 minute.Ultraviolet radiation(UV) photolithographic methods are utilized to form set patterns onto porous anodic aluminum oxide(AAO) templates.Then,polystyrene one-dimensional nanostructures are prepared by depositing a solution of polymer into this modified template.Cu one-dimensional nanostructures are also prepared by depositing a solution of CuSO₄ into this modified template.BP-212 positive photoresist is used in patterning AAO templates.Then,patterned polystyrene nanowire arrays are produced. The products were characterized by scanning electron microscopy(SEM) and X-ray energy dispersive spectroscopy(EDS).The results of SEM illuminated that the pattern contains many identical circular structures;the diameter of each rotundity is about 5μm. And the space between each circularity is also 5μm.And the patterned polystyrene and Cu nanowire arrays completely copied the pattern on the mask.