The Forouhi-bloomer Equations Applied Research In The Thin-film Optical Measurement

With the rapid development of domestic nanometer industry,the performance inspection standardization of import semiconductor devices and relevant nanometer materials has become important part of the National Eleventh Five-Year Plan in science research.Besides,for the particular physical and chemical properties in nano-device manufacturing, nano film has been the hotspot in nanotechnology research. To determine the opto-electronic properties of the nano film, thickness inspection is the critical point.However, the most available inspection methods for nano film thickness bring many negative effects,such as narrow inspecting scale,long time and damaging for products. So, those methods cannot meet the requirements of standardization of test methods and the needs for fast,nondestructive and accurate testing proposed by CIQ(Chinese Inspection and Quarantine).Forouhi-Bloomer Dispersion Equations and wide spectrum(190-1000nm) spectrophotometry are introduced to calculate the film thickness(d) of metal, semiconductor and dielectric film, and the dielectric constant indirectly. Comparison of results with the ellipsometer and SEM measurements verify the test results and show that the n&k method is a kind of fast and accurate test method. In addition, Forouhi-Bloomer Dispersion Equations and RCWA are introduced to calculate and describe the trench depth and step width of one-dimensional periodic structure on nano film.The n&k method is new and valuable in nondestructive and in-line inspection of nanometer film's opto-electrical properties, which has not widely used in nano industry,and the results of this systematic research provide important reference frame for further application of this test method and the standardization of nanometer film inspection.