Ion Beam Deposited Ysz Film Growth Mechanism Of Competition Studies,

Based on changing various experimental parameters, competitive mechanisms of two grain growth orientations of the yttria stabilized zirconia (YSZ) buffer layer of YBCO coated conductors deposited by ion beam sputtering deposition (IBSD), is studied in this report.First, YSZ thin films deposited on different substrates by ion beam assisted deposition (IBAD), we get the optimal result through changing the energy E and current density Ja of assisting ion beam,and X-ray diffraction (XRD), scanning electron microscope (SEM) were used to characterize the obtained YSZ films.The optimum test parameters of the assisting source are energy E=270 eV, and ion beam current density Ja = 0.51 mA/cm2; and under the same ion / atom arrival ratio conditions, we study the growth of YSZ thin films. We find that assisting ion can improve the degree of the in-plane and out-of-plane orientation, but too much assisting ion energy can adversely affect them.Second, IBAD-YSZ thin films, on different substrates, with different thickness are prepared by using the same sputtering and assisting source parameters, while the non-IBAD samples are prepared by the same deposition time. Control study of methods used to study the different growth stages of YSZ thin films prepared by IBAD and non-IBAD method, respectively. Formation process of biaxial textured YSZ thin films by IBAD are discussed.And we study the growth of YSZ films prepared by non-IBAD method with different sputtering energy conditions and IBAD method with low energy and low current density. It is found that IBAD method contributes to the YSZ films from (220) to (200) orientation.Third, we study the YSZ thin films prepared by non-IBAD method on the substrate with different angles. It aims at the deposition atom bombardment at different incident angles to the substrate. We use X-ray diffraction, scanning electron microscopy and atomic force microscopy (AFM) and other methods to characterize the YSZ buffer layers to study the competitive mechanisms of the two growth orientations of the YSZ thin films. We find that as the angle increased, two orientations of the grains have regular changes.