High-k Dielectric Films, Atomic Layer Deposition And Nano-device Applications

As the feature size of integrated circuits shrinks down to submicro regime, the technologies and physics problem challenging the fabrication of CMOS device at the nanoscale have been urgent and important task. Recently, research of high k dielectric film has become a hotspot in the field of microelectronics, duo to the great properties and attracting application prospect. In this thesis, good quality high k dielectric film has been synthesized, and the applications in biology and microelectronics field have also been investigated.First, Al2O3 and HfO2 film are synthesized utilizing atomic layer deposition technique, the surface topography and consitituent of which is characterized by the atomic force microscope and energy dispersive spectrum, the effect of deposition temperature and film thickness on the surface roughness is also analyzed. Besides, the dielectric property of the film capacitor has been investigated and could be as an appropriate gate dielectric film due to its high permittivity (10～20); and much low leakage current (1μA/cm2 at 18V) and high break down voltage (over 65V).In addition, the ZnO NW field-effect-transistor with top gate structure is fabricated using Al2O3 film as gate dielectric layer, the out characateristics is also investigated. The test results show that the devices with Al2O3 film as gate dielectric layer can reduce the working voltage largely below 5V, in order to reduce the power dissipation effectively.Further more,as the film deposited with atomic layer deposition system (ALD) have many advantages, such as uniformity, conformality and so on, therefore, we try to deposit Al2O3 film to ameliorate the surface around the opening pore and shrink the size of the solid state pore for biomacromolecule detection. Before that, the fabrication process conditions of nanopore on Si3N4 film are optimized and finally a solid state nanopore with diameter of 6 nm is fabricated.