New Mip ~ +-al <sub> X </ Sub> Of Ga <sub> 1-x </ Sub> As / P-gaas / N-gaas / N-~ +-of Gaas Solar Cells

In this paper, a novel solar cell was designed and theoretically analyzed. This novel solar cell was developed upon the traditional AlGa 1As/GaAs solar cell. With the reduced hand gap of the p Al,1 Ga 4s ,it works as an absorbing substrate. To reduce the surface recornbination and collect the photon stimulated current, we build an electric field in the surface layer of p Al,1 Ga1As. We also give some analysis of how to get the maximum property by adjusting the semi-conductive and geometrical parameters. Under the optimum parameters, get the I-V relationship and the result of the solar cell as the following: 39.01 (mA/cm2) = 1.231 (V) FF = 0.889 ri =31.55% This result shows that the efficiency of the novel cell is almost 3% higher than the traditional AlGa1As/GaAs solar cell.