| A novel, complex structural MIp+-AlxGa1-xAs/p-n-n+-GaAs solar cell with high efficiency, was designed successfully for the first time. By choosing suitable value of x, p+-Al0.3Ga0.7As was added as one more working layer. And it was creative to introducing fixed negative charges to change the shape of the band and to establish an induced potential which would prevent the photo-generated electrons from moving to interface, so as to dropping the interface recombination velocity. It was first successful attempt on energy band engineering in GaAs solar cell. And the theoretical study on I-V characteristics of the cell was accomplished firstly by a new way, that is analyzing and calculating as a whole, and it is different from conventional calculation for tandem solar cell. Then the highest theoretical efficiency is 31.55%. The experiments have proved that open-circuit voltage increased about 10%. And in our laboratory, the p+-Al0.Ga0.7As/p-GaAs interface, which connected the induced junction and pn junction, was made easily at one time. Meanwhile, the results of electron irradiation experiment have shown that the cell has great radiation hardness relatively.By simple Hot Wall Epitaxy (HWE), GaAs thin films were prepared on cheap substrate, which possessed good structure, electronic and optical features and were suitable for polycrystalline thin film solar cell. The key achievement was GaAs/Si polycrystalline films have obtained, with textured surface and columnar grains, which is the aim pursuing in study on thin film materials for solar cell all over the time. The most inspired that the GaAs/SnCVGlass films with textured surface and performance adapting to solar cell were grown on conducting glass directly, in order to prepare the electrode. There is no report about it at this moment.
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