Preliminary Study For The Calculation Of The Pulsed Bias Arc Ion Plating Deposition Temperature And Nano-multilayer Hard Film

The substrate temperature is one of most important factors, which influence the properties of films and substrate. Compared with Direct Current Bias Arc Ion Plating(DCAIP), Pulsed-bias Arc Ion Plating(PBAIP) not only can decrease the substrate temperature efficiently , but also can be applied in the substrate whose temperature of temper or stress is very low; further more, at the same deposition temperature, the properties of films can be improved by the optimal combination between the bias voltage and duty cycle in PBAIP. However, till now there is no systemic report in why the substrate temperature can be decreased and how the temperature can be influenced by the electric parameters in PBAIP. If the substrate temperature can be predicted or controlled by adjusting the parameters, it is significant to improve the films properties, broaden the range of substrate material, or design the reasonable deposition techniques.There is a difference in bias voltage on substrate between Arc Ion Plating(AIP) and Pulsed-bias Arc Ion Plating(PBAIP). The bias voltage of substrate in PBAIP has been analyzed by experiments and its wave profile is basically rectangle. The factors, which influence the substrate temperature, are discussed in detail and the results shows that the substrate temperature is mainly decided by ion bombardment, heat radiation, heat conductivity. On the basis of energy conversation principle, a model of substrate temperature incorporates power density of ion bombardment, heat radiation and heat conductivity in PBAIP when the bias voltage varies from -1000V to 0 has been established, and experimental tests are also conducted to verify the calculation and a good agreement is observed between calculated results and experimental results. From analyzing the calculation model of substrate temperature, it is found that the input power density of PBAIP is only D(duty cycle, D<1) times as one in DCAIP and the temperature can be controlled efficiently by adjusting the parameters such as bias-voltage or duty cycle in PBAIP.Based on mechanism of the low substrate temperature controlled by technique parameters, multilayers can be deposited on alloy by PBAIP. In this paper, by infusing N2 to chamber periodically, Ti/TiN multilayers are produced. The results shows that nano-multilayers cae be deposited by infusing N2 periodically in PBAIP, combination force is about 90N and micro-hardness is about Hk 3000 kgf/mm2 when the modulation structure is 100nm.These properties are better than TiN films produced in PBAIP. The Ti/TiN multiplayer with super hardness has been deposited by adjusting the modulation period, and the maximum of hardness is 4799 kgf/mm2. There are two reasons in improving the hardness of films., one is the refining effect of the grain size, the other is that dislocations are blocked when moving among the layers.