Ion Beam Assisted Vacuum Arc Deposition Of Tin / Cnx Films

This article studied the TiN/CNx film prepared by Bulat-6 multi- arcs ion film plating machine with different processes parameters in two ways, the titanium/graphite compound target (Ti/G) and the titanium /methane/nitrogen (Ti/CH₄/N₂). Surface and section of the TiN/CNx compound film were observed by SEM; structure of the film were determined by XRD; hardness of the film were measured by the microhardness test machine; resistance of abrasion were measured by the machine of abrasion. The affection of craft and parameters to the structure, appearance, microhardness and friction attrition performance of the film were analyzed in the article. The result indicated:In the way of Ti/G compound target prepared TiN/CNx, the best arc current is 75A, which might obtain the appropriate ingredient ratio with the target material design. The low-energy ion beam assistance deposition may enhance the film depositing rate, attains to the overall better performance of the film, but the high-energy ion beam can effect to the film surface by the certain sputtering role, which can reduce the depositing rate. Nitrogen pressure affect the degree of hardness of the TiN/CNx film is remarkable. Enhancing the nitrogen pressure, the microhardness of TiN/CNx film will strengthen. Experiment in the way of Ti/G compound target show that the best performance of the TiN/CNx film will be obtained by the condition that the ion accelerating voltage is 2500V, the ion beam current is about 120mA , and nitrogen pressure is 4.1 ×10^-1 Pa. The TiN/CNx film prepared by compound target contented graphite 1. 5%wt is harder than that prepared by compound target contented graphite 3%wt. And the TiN/CNx film prepared by compound target contented graphite 3%wt has better property of friction attrition with the GCrl5 steel ball.In the way of Ti/CH₄/N₂, the method that the nitrogen enters the vacuum depositing room through the ion source will enhanced the rate of...