Study, Based On The Mosfet's High Repetition Rate Solid State Switch

High repetition rate pulsed power source technology is the hotspot in pulsed power field. High repetition rate switch technology is the key of high repetition rate pulsed power source technology. The components that are suitable for working on MHz repetition rate are MOSFET, IGBT and PCSS. MOSFET and IGBT are electrical triggered components and PCSS is optical triggered component. The voltage and current of Single MOSFET or IGBT are limited, and high switch voltage and high switch current can be obtained by using MOSFET or IGBT in series linked mode and parallel linked mode. MOSFET has higher working speed and smaller voltage and current than IGBT's. MOSFET has been selected for study the solid state switch technology working on higher repetition rate.The key technologies of build solid state switch by series link and parallel link of MOSFET are trigger signal optical isolation, MOSFET driving, active voltage and current balancing, MOSFET component over voltage protection. Theoretically circuits design and PSpice simulation had been performed on these t echnologies, and the primary c omponents had been selected based on these works. A experiment circuit has been build to study these technologies. The experiments show that MOSFET switch can work on MHz repetition rate and series link and parallel link of a small quantity of MOSFET can get higher switch voltage and higher switch current. Potential problems of series link and parallel link of large quantity of MOSFET have also been discovered. The ultimate voltage of MOSFET component under pulsed voltage condition has been tested by a voltage pulse source based on MOSFET switch. This voltage is very important for MOFET over voltage protection and make the design parameter of the protection circuit more clearly.