Anodized Aluminum Films, Water-resistant Features,

How to improve hydration resistance of anodic oxide films effectively is the leading content in this paper. Based on the actual state of improving hydration resistance of anodic oxide films in the world, hydration resistance and its technologies are explored and investigated. Hydration resistance mechanisms and effects of technologic parameters on rising time, specific capacitance and withstanding voltage are expatiated. The important results and innovations are as follows:1. Anodic oxide films are treated with galvanization in monobasic ammonium phosphate (ADP) solution. The effects of technologic parameters, including concen- tration and temperature of ADP solution and galvanizing time on rising time of anodic oxide films are discussed.2. After dipped in amino trimethylene phosphonic acid (ATMP) solution, anodic oxide films are annealed in pipe stove. The influences of concentration and temperature of ATMP solution and annealing temperature on rising time, withstanding voltage and specific capacitance of anodic oxide films are studied. After hydration, anodic oxide films treated with ATMP or not are analyzed by FT-IR. The results show that, the hydration resistance of anodic oxide films treated with ATMP is improved greatly, the rising time decreases to 8s from 15s, which is the rising time of anodic oxide films treated with ADP, and FT-IR analysis confirms that ATMP treatment can inhibit oxide films from hydration effectively in boiling water.3. Diethylene Triamine Penta Methylene Phosphonic Acid (DTPMP) is applied to hydration resistance treatment of anodic oxide films, which treating method is same as that of ATMP. The optimum concentration and temperature of DTPMP solution and optimum annealing temperature are discussed. In addition, hydration resistant effect of anodic oxide films treated with ADP, ATMP and DTPMP respectively is discussed through FT-IR, XPS, AFM and I-V characteristics testing. The results show that, anodic oxide films treated with ATMP and DTPMP can achieve more perfect hydration resistance, especially DTPMP, which has least rising time ,7s.4. Use of dibasic ammonium phosphate and gluconic acid delta lactone to improve...