Pgm Film Deposition Mechanism In The Early Numerical Simulation

Thin film technologies, one of new material manufacturing technologies, were widely used in modern scientific and technological fields. Thin film deposition had been widely investigated by means of theories and experiments. Computer simulation was becoming an important method in the objects. According to the theory of finite element method (FEM), the metal platinum film deposition mechanism was studied by ANSYS/LS-DYNA which was widely used in macro-fields in this paper.In this article, five models of describing the movements of the rigid spheres reached C or Si substrate such as Pt, Pt— Ru, Pt—Ti, Pt— Ni, Pt—Al were mainly discussed. Some important factors such as the hardness of substrate, the difference ratio of radius, the interactions between particles, the incident angle (θ) and kinetic energy of incidence particles, which should been considered in thin film deposition were analysed.The theory of chain-lock crash explained dynamics reason and mechanism of film defects to form. And the deposit atomics' kinetic energy was enough large (about 200eV) to cause "atomic loose" defects while Pt atomic group reach C subtrate. When random Pt atoms' energy reached to threshold limit value 75eV they would permeate into next carbon subtrate. And interal atom would promote the formation of the dislocation.On the graphite substrate, the film of deposited Pt atoms would grow according to island growth mechanism. The "stump" island model was firstly tested for film growth. And if the incident angle(θ) becomed too large, possibility of thin film structure in accordance with the streak growth mechanism would become too huge.And the structural defects of film would enough easy to form.Under consideration the above-mentioned, we tested the rationality and suitable of the finite element method in micro-fields. During the simulation, the geometric model of spring plasticity was adopted.The interactd relation of nanometer particles was simulated and expressed from FEM and macroscopic mechanics in order toinvestigate thin film deposition theory. And the simulation results also explored the progress of the problem about big-scale and long-time.