Based On Active Fss Structure Of Single-layer Tunable Microwave Absorber

Although conventional/passive radar absorbers are widely used for modifying the radar cross-section(RCS) of current military platforms, such absorbers may not have adequate performance to satisfy future requirements. For example, a passive radar absorber, once designed and manufactured, has fixed characteristics that are bounded by the electrical thickness at the lowest desired operating wavelength. Active absorbers, however, offer the potential to overcome the Rozanov limit. This paper investigating the active absorbers is based on topology of a Salisbury screen, but uses an active impedance layer to provide reflectivity tuning. The active impedance layer is a FSS controlled by semiconductor PIN diodes. Hence we have been investigating the use of Ansoft HFSS(High Frequency Structure Simulator) to provide accurate predictions of the behavior of active FSS radar absorbers.Then a experimental absorber's RCS have been tested in an anechoic chamber.