Preparation And Properties Of Tan Microwave Power Film Resistor,

TaN thin films possess wide resistively, low temperature coefficient of resistance and chemical inert properties, which can be widely used in microwave power resistors. In this thesis, TaN films were prepared by reaction magnetron sputtering. The influences of sputtering pressure, N₂ partial flow and annealing temperature on the micro-structure and the electric properties were explored. Based on the TaN film preparation, the structure parameters and the micro-wave properties of TaN micro-wave power resistors were designed and simulated by HFSS software, respectively. At last, the TaN micro-wave power resistors were prepared by reaction magnetron sputtering.The results show that the square resistance and the TCR of the samples are all decreased with the increase of sputtering time. With the increase of sputtering pressure, the N content, square resistance and the TCR of the samples increase. With the increase of N₂ partial flow, rich nitrogen phases are presented. The N content, square resistance and the TCR of the samples increase. With the increase of annealing temperature, the grain size, square resistance and the TCR of the samples increase.The optimized preparation parameters are as following, 600℃of substrate temperature, 15min of sputtering time, 0.2Pa of sputtering pressure, 60W of sputtering power, 3% of N₂ partial flow and 300℃of annealing temperature. The film performances of the film prepared by optimized preparation parameters are sheet resistively of 20Ω∕□,TCR of 7ppm,grain of size 200nm.Two TaN micro-wave power resistors of 100W, 3GHz and 300W, 1.5GHz were designed and simulated by HFSS. The samples of the two TaN micro-wave power resistors were prepared by reaction magnetron sputtering. The actual power load and the micro-wave properties are consistent in the design results.