A New Power Of Silicon-based Integrated Circuits Design And Manufacture

The paper proposed a new power supply management Integrated Circuits (IC) based on single crystal silicon, which is compatible with high and low voltages technology. It makes the supply, sensor, control and large scale driver integrated on a chip. With the development of the SoC scale, the system power dissipation must be attenuated to ease the pressure of power IC include power manager, meanwhile develop the corresponding high quality power supply management IC, which consists of sensor, control, driver and supply, it can integrate further control (time serial logic, DSP and its solidify arithmetic) and protect circuits, to realize smart control with stronger function. Due to involved in power system, single-chip power system faced more difficulty and had particularity; at the same time it is the inevitable development trend of next generation system integration. It must easily realize the system miniaturization, high frequency and high efficiency, high reliability, low cost, low pollution. It has a wide application foreground. The basic design index of our new power manager is: break down voltage 700V, maximal current 300mA, work frequency 132KHz. In process design, the conventional epitaxial process is abandoned and then a novel BCD process is introduced. Low voltage circuit and high voltage power device is integrated on the crystal P-substrate. The simplified process flow is given. The number of the Masks in the process is not so many, which makes the manufacture cost lower and the yield rate increased accordingly. In device design, we analyses the matching principle and optimize electric parameters for the MOS, Bipolar and passive devices used in integrated circuit. In circuit designing, at first, the paper describes the function principle of a power supply manager, then makes functional introduction about parts of sub-circuits, these sub-circuits include: reference voltage, oscillator,...