Preparation And Characterization Of AlN/ZnO Films By Magnetron Sputtering

Aluminium nitride (AlN) film, which has great application in optics, electrics and semiconductor domain, is a kind of important III-V semiconductor. AlN film has many outstanding physical and chemical properties, such as wide direct bandgap, big breakdown field, high thermal conductivity, good chemical stability, high surface acoustic velocity, high melting point, low thermal expansion coefficient, etc. So, the investigation on the preparation, characteristic, growth mechanism and application of aluminum nitride films is very significant. So it is feasible that the ZnO film acts as a buffer of the preparing high quality AlN films.Using RF magnetron sputtering method, AlN films and ZnO films were prepared on Si substrates at different gas concentration, sputtering pressure and sputtering power, and then AlN films were successfully deposited on ZnO films.The surface morphology of AIN/ZnO films were observed by using scanning electron microscopy (SEM).We found that about 1μm-size and hexagonal crystal particles combined densely and distributed uniformly on the film surface. It was indicated that the AlN film with good crystalline, pure structure, good orientation was obtained.AlN, ZnO and AIN/ZnO films were characterized by using Raman (Raman) scattering and X-ray diffraction (XRD) experiment technology. It was indicated that ZnO films with pure c-axial orientation were obtained. We determined the optimal experiment condition of AlN films deposited on Si by the preparation and the characterization. Through the observation of XRD spectra, we found that AIN/ZnO films with about 1.1μm-size crystal particles had the good crystalline, unique (002) orientation which is consistent with the result of the SEM image.