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MgxZn1-xO Thin Films Prepared By Magnetron Sputtering And Its Properties

Posted on:2012-12-22Degree:MasterType:Thesis
Country:ChinaCandidate:Y Y WangFull Text:PDF
GTID:2211330338965992Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
MgxZn1-xO Ternary solid-solution was a kind of semiconductor compound based on ZnO.It had broad research fields such as light emitting diodes (LED), laser diodes (LD), solar cell and UV detection, also it can used as UV light emitting device, so it has very high application value.Therefore in recent years many research to this material were taken,and its preparation technology becomes more mature.Ceramic target consisted of Mgo.4Zn0.6O were selected to prepare MgxZn1-xO thin film using radio-frequently magnetron sputtering.The structure, morphology and performance of the thin films were studied at different sputtering time,different sputtering powers and different substrate temperature.In addition, the characteristics diversification of thin films after annealing treatment were also investigated.The lattice structures and phase compositions of the thin films were estimated by XRD analysis.Simultaneously, the grain size was calculated using the Fitting and Scherrer-type formulas.Using EDS to analysis the thin films on different substrates under different composition conditions, SEM photographs were used to observe the morphology of samples.The band gap changes result from Mg incorporation can be approximately calculated by the analysis of absorption spectrum, and the UV absorption edge of thin films grown on Quartz and sapphire glass substrates were determined.The emitting light wavelength and the luminous intensity of the MgxZn1-xO thin film under each technological conditions were analysed through the emission spectrum under the 223nm UV emitting ray.
Keywords/Search Tags:MgxZn1-xO thin films, RF magnetron sputtering, UV detection
PDF Full Text Request
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