The Study Of The Sol-Gel Preparation Of PZT Thin Film

Lead zirconium titanate (PZT) thin film materials have extensively application prospect and have been widely concerned for their interesting good pyroelectric, piezoelectric and ferroelectric properties in high-tech areas including microelectronics, optoelectronic technology, microelectromechanical systems, etc.This paper states that sol-gel technique preparates lead zirconium titanate (PZT)pyroelectric thin films, and also studied that sol concentration, PH, water content and additive content etc. are mostly process parameters of preparating lead zirconium titanate (PZT) pyroelectric thin film, and they are influenced on the thin film structure and surface morpHology. In the process of studying the preparation of PZT thin film, firstly, if the uniform thin film is prepared, it is able to match that the lattice constant of a substrate and the one of PZT thin film materials. This paper chooses three different substrates, which are respectively Al2O3 ceramic substrate, the quartz glass substrate SiO2 and monocrystalline silicon Si substrate, and finally choose an optimum substrate as film substrate by comparing the three kinds of substrate film quality. Secondly, compared with 52/48, the PZT thin film of the ratio of zirconium and titanium is 65/35 improves in pyroelectric propertie, and research of the 65/35 ratio is order to enhance and improve the structure and properties of PZT thin film. Finally, using the inorganic zirconium nitrate Zr(NO3)4 as zirconium source can improve the expensive price of organic zirconium source and the problem of higher-required experimental device.