Effect Of Particle Irradiation On Electrical Properties Of Lead Zirconate Titanate Fimls And Annealing Effect

Lead zirconate titanate thin films have attracted much attention due to their excellent ferroelectric,piezoelectric and pyroelectric properties.Sensors,memory,infrared detectors and other electronic components with lead zirconate-titanate ferroelectric thin films as key materials have very good application prospects in the aerospace field.However,space electronic components will be affected by various environmental factors.Among them,charged particle radiation seriously affects the service characteristics of materials and devices,and then affects the stable operation and service life of spacecraft.Therefore,it is very important to study the radiation degradation law and mechanism of lead zirconate titanate thin film materials for the design and use of space electronic devices.Lead zirconium titanate ferroelectric thin films were prepared by sol-gel method.The effects of substrate?Pt/Ti/SiO₂/Si and Si base?and annealing temperature?600?,650?,700?,750??on the properties of PbZr_0.52Ti_0.48O₃?PZT?ferroelectric thin films were studied.By comparing the relevant test results,it was found that the PZT films prepared on Pt substrate have the best crystallinity,surface morphology and electrical properties.The effects of energy and fluence of electron irradiation on the electrical properties of PZT ferroelectric thin films were systematically studied.It was found that with the increase of irradiation energy and fluence,the polarization and dielectric constant of the irradiated samples degraded obviously.The dielectric loss at low frequency decreased with the increase of energy and fluence,and the dielectric loss at high frequency did not change significantly.At the same time,the electrical properties of the irradiated samples decreased significantly with the increase of time.The electrical properties of PbZr_0.52Ti_0.48O₃ ferroelectric thin films irradiated by protons and their evolution with time?i.e.time annealing effect?were studied.The results showed that with the increase of proton irradiation fluence,the loss of polarization and dielectric constant increased,the dielectric loss at low frequency increased,and the dielectric loss at high frequency did not change significantly.After proton irradiation,the polarization of PZT films decreases gradually with time,while the dielectric constant and dielectric loss do not change significantly with time.In addition,the?111?characteristic peaks of PZT films move to the left and the width of FWHM increase after proton irradiation.The larger the irradiation fluence,the more serious the left shift.The residual stress of PZT films changes from compressive stress to tensile stress after irradiation.And the valence of elements in PZT films changes,and some elements of Pb change from+2 valence to+4 valence.The recovery behavior of electrical properties of PZT samples irradiated by particles under different annealing conditions?temperature and atmosphere?was studied.The results show that the electrical properties of the two kinds of irradiated samples are recovered to the greatest extent when annealed at 500?,while the annealing atmosphere has no obvious effect on the recovery of electrical properties of the irradiated samples.