Font Size: a A A

Ag Doping Lbmo Materials And Liv Effect

Posted on:2013-01-07Degree:MasterType:Thesis
Country:ChinaCandidate:S C ZhangFull Text:PDF
GTID:2211330374965261Subject:Materials science
Abstract/Summary:PDF Full Text Request
Rare earth manganese oxide materials have colossal magnetoresistance (CMR) effect and laser induced voltage (LIV) effect. Therefore, it can be used to fabricate near room temperature Bolometer, laser power energy meter and other novel photoelectronic devices and sensitive detectors. There are relatively broad application prospects for rare earth manganese oxide materials.In this paper, Ag doped La2/3Bai/3MnO3(LBMO:Agx) polycrystalline targets, with x=0.00,0.02,0.04,0.06,0.08,0.10,0.20,0.30,0.40, which were prepared by Chemical co-precipitation method. Furthermore, LBMO:Agx thin films were fabricated on single crystalline LaAlO3(100) substrate by Pulsed Laser Deposition technique. The experiment tends to investigate the influence of mechanism of Ag-doping and Ag addition to get the most perfect fabrication technology and addition which have corresponding with the best LIV effect.1. LBMO:Agx polycrystalline targets which were sintered at1100℃1200℃,1300℃have been prepared by co-precipitation method. Results show that: The samples sintering at1300℃got the maximum Tp and minimum resistivity, for the samples x=0.2, x=0.4which were sintered at1100℃, and the samples x=0.4which were sintered at1200℃, some extra cubic diffraction peaks of metal Ag appear along with the perovskite peaks, no extra cubic diffraction peaks of metal Ag appear along with the perovskite peaks for all the samples which were sintered at1300℃. The metal-insulate transition temperature (Tp) increases with the addition of the sintering temperature and the Ag doping. Mole percent of La, Ba, Mn in the samples are approximately equal to that of design values. However, that of the Oxygen and Ag atoms in the samples are lacking than that of design values. It probably results from the volatilization of the Oxygen and Ag atoms at high sintering temperature.2. LBMO:Agx thin films have been fabricated on vicinal-cut single crystalline LaAlO3(100) substrates by Pulsed Laser Deposition technique. Meanwhile, the impact of growth conditions on fabrication of film were discussed. We found that LBMO films show a good magnetic and electrical transport under the optimized growth parameters. Furthermore, Ag doping and vicinal-cut LaAlO3(100) substrates produce great influence on Laser induced voltage (LIV). Results show that:with Ag content increasing, the peak value of LIV signal (UP) increased firstly and arrived to its maximum at x=0.06, then Up decreased. LIV of LBMO:Agx film increase with the substrate angle and laser output signal energy increases.
Keywords/Search Tags:La2/3Ba1/3MO3:Agx, Chemical Coprecipitation, Pulse Laser Deposition, Laser-Induced Voltage, Metal-Insulator Transition Temperature
PDF Full Text Request
Related items