Low Drive Voltage Rf Mems Capacitive Switch Design And Analysis

With the gradually development of Micro-Electro-Mechanical Systems, this technology shows good characteristics at miniaturization, low consumption, high factor of quality. Simultaneously, it is widely applied in some important fields such as automobile safe, communication, and test equipment, aerospace and national defense, all mentioned above, RF MEMS is becoming more and more important. RF MEMS switch not only is one of the most important MEMS devices, but also it is one of MEMS devices that the most technically matured and widely used. In this paper, pay more attention on design and analysis of RF MEMS switches with the low pull-in voltage.The main work:1. Analyze the reason of pull-in effect and the solution formula of pull-in voltage is derived.2. Low pull-in voltage RF MEMS capacitive switches design.3. The detailed electrical and mechanical analysis of RF MEMS switches.4. RF MEMS switch equivalent circuit model be built by using of F-V method,and using equivalent circuit model to facilitate the design of RF MEMS switch.In this paper, firstly, introduce the advantages and disadvantages of RF MEMS switches and show its important parameters. Then giving a detailed design process of low pull-in voltage RF MEMS switch and obtaining low voltage (less than 35V),low insertion loss(-0.32dB)MEMS switch. Finally, detailed description of the application of equivalent circuit model in the design process of low voltage MEMS switches, and how to analyze the effect of the residual stress and medium flatness on MEMS switch design.