Study On The Preparation And The Performance Of AZO Film In The Method Of Sol-Gel

With people paying more attention for new energy resources appears theincreasing demand to the solar photoelectric technology which is the researchhotspots. No matter in basic level research or the application in real life, it promotesthe development of oxide semiconductor transparent conductive film system. Thiskind of material system has a wide level of forbidden band. In visible area, it ownshigh transmission rate, in ultraviolet area, it has low resistivity, these characteristicsmake film have occupied an important position in new electronic film materials; Inthe aspect of application, with the development of new high technology and ceaselessexpansion of application, the study becomes a hot spot.This paper focus on the preparation of transparent conductive Al-doped ZnOfilm in sol-gel method. The preparation process, film crystalline structure, and zincoxide thin film transmittance and resistivity are analyzed. The conclusions are asfollows:Sol preparation process: the precursor of the two hydrated zinc acetateconfiguration doping nine hydrated aluminum nitrate, diethanolamine as a stabilizingagent, ethylene glycol monomethyl ether as solvent, the sol is mixing in water bathfor120min and stewing for48h, and finally get a uniform and stable ZnO sol. Thefilm preparation process: distributed rotate speed of600r/min, spin coating speed of3400r/min, spin coating5to12layers, the pretreatment temperature of200°C,annealing temperature of300~500°C.By study of sol concentration, doping concentration, annealing temperature andfilm thickness, the feasible ZnO preparation process as follows: sol concentration of0.1mol/L, doping molar percentage of2%, the annealing temperature of500°C. Thevisible light transmittance of ZnO thin films is up to90%, and the sheet resistanceratio is up to8Ω/square.