Deposition Of SiO₂Thin Films By High-power Pulsed RF Magnetron Sputtering On Al Coated ABS Plastics

In this paper, the methods of continuous ratio frequence magnetron sputtering(CRFMS) and high power pulse magnetron sputtering(HPPMS) has been used to realize the deposition of SiO2thin film on the surface of ABS deposited Al, expecting to improve the corrosion re-sistance level of the surface of ABS deposited Al. We used Si target, pure gas O2and Ar to deposite SiO2thin film.In the experiments, the thermocouple has been used to avoid the ABS plastic deforma-tion during the deporation process. We used the NaCl·CuCl2solution, PH during3.1to3.3, measured the corrosion resistance of the SiO2thin film deposited by CRFMS and HPPMS. Then we used the Langmuir single probe to measure the plasma parameters and researched how the corrosion resistance varied with the plasma parameters.In conclutions, firstly, the depositing process temperature should be lower than70℃. Secondly, the corrosion resistance time of SiO2thin film deposited by CRFMS at power100W was only over one hour, but the corrosion resistance time of thin film deposited by HPPMS at power400W and500W was4hours. It was showed that the quality of SiO2thin film deposited by HPPMS was better than that by CRFMS. Thirdly, the langmuir single probe result showed the electron density of CRFMS at power11W was1.25×109cm-3, but the electron density of HPPMS at power200W,300W,400W and500W wass1.5to7times than that of CRFMS at100W. The electrons temperature of CRFMS at power100W was3eV, and the electrons average temperature of HPPMS at power200W,300W,400W and500W were10.62eV,10.46eV,10.18eV and9.87eV. The plasma space potential of CRFMS at power100W was11V, but the plasma space potential of HPPMS at power200W,300W,400W and500W were5to6times than that of CRFMS at power100W. It showed the structure of SiO2thin film was more densification varying with high electron den-sity, electron temperature and plasma space potential.Meanwhile, we found the plasma space potential of HPPMS was in60eV to70eV, and the space potential did not vary with the electron density reduceing when the HPPMS dis-charge stopped. After about half a cycle, the space potential gradually reduced.