| Rare-earth oxide thin films are widely used in many different fields of technology. They exhibithigh dielectric constants （such as, k （La2O3）=27, k （Gd2O3）=16） and high thermodynamic stability（silicon wafer）, which enable rare-earth oxide thin films as high-k maerials. These potentialapplications have enhanced the research activities related to the growth of high quality thin films ofrare-earth oxides by atomic layer deposition （ALD）. But this techniques require precursor compoundswith reasonable volatility, which is not always easy to achieve in lanthanide chemistry. This is asignificant challenge for the synthetic chemist.In this thesis, two series of lanthanum and gadolinium complexes have been synthesized. Frist,synthesis of lanthanum and gadolinium complexes with a donor-functionalized alkoxide ligands:[La（OCH2CH2NMe2）3]（2a）;[Gd（OCH2CH2NMe<sub>2）3]（2b）;[La（OCH2CH2NEt2）3]（2c）;[Gd（OCH2CH2NMe2）3]（2d）; Li12[La（OCHMeCH2NEt2）3]4OCl10（2e）;Li12[Gd（OCHMeCH2NEt2）3]4OCl10（2f）；[La（OCHMeCH2NEt2）3]（2g）;[Gd（OCHMeCH2NEt2）3]（2h）. Second, synthesis of lanthanum and gadolinium complexes with two donor-functionalizedalkoxide ligands:{La[OCH（CH2NMe2）2]3}2（3a）;{Gd[OCH（CH2NMe2）2]3}2（3b）;La[OCH（CH2NEt2）2]3（3c）; Gd[OCH（CH2NEt2）2]3（3d）; La[OCH（CH2OMe）2]3（3e）;Gd[OCH（CH2OMe）2]3（3f）; La[OCH（CH2OEt）2]3（3g）; Gd[OCH（CH2OEt）2]3])（3h）. The obtainedcomplexes have been characterized by elemental analysis,1H NMR and13C NMR. Complex2e,3a,3b was characterized by X-ray single crystal analysis. Complex Li12[La（OCHMeCH2NEt2）3]4OCl10（2e）, cubic Fd-3，a=32.341（4）,b=32.341（4）, c=32.341（4）, α=90°, β=90°, γ=90°, Z=32.Complex {La[OCH（CH2NMe2）2]3}2（3a）, Triclinic P-1, a=10.682（2）,b=11.273（2）, c=13.692（3）, α=86.17（3）°, β=83.34（3）°, γ=62.02（3）°, Z=1. Complex {Gd[OCH（CH2NMe2）2]3}2（3b）, triclinic P-1, a=10.575（2）, b=11.219（5）, c=13.575（3）, α=87.75（4）°, β=82.82（3）°, γ=61.89（2）°, Z=2. Finally, the thermal analysis and decomposition mechanism of the complexeswere preliminarily studied by themogravimetry （TG）. |
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