Study And Improvement Of The Temperature And Flow Fields For The High Temperature Chemical Vapor Deposition System

Simulation and improvement of the equipment performance of existing silicon carbide (SiC) materials are of use for the material quality. Combining the real need of the SiC research team of Novel Semiconductor Material Laboratory, Institute Semiconductors, Chinese Academy of Sciences, the performance of Chemical Vapor Deposition equipment is investigated in this paper. First, the SiC materials are introduced. Second, the epitaxial growth methods of SiC are developed, including the principle and equipment structure of High Temperature Chemical Vapor Deposition (HTCVD), the key technology of the related equipments. Then the radio-frequency-induction of the HTCVD is simulated and analyzed, the improvement method is proposed and the performance is simulated. And furthermore, the fluid and temperature fields of the equipment are simulated before and after improvement. Finally, the numerical simulation results are verified by the experimental measurements, showing that they agree well with each other.