Preparation And Photoelectric Properties Of Transparent Conducting AZO Thin Films

ZnO is a wide band-gap semiconductor material, and has excellent optical and electrical properties. It has many excellent properties, such as high thermal conduction, high stability of its chemical properties, low cost and toxicity, especially its abundance in resources, thus ZnO is considered having potential application for photoelectric material fields. If elements like Si, Ga, Al, B and In are doped into ZnO, the performance of ZnO would be improved a lot and it will be more widely used as well. In recent years, Al-doped ZnO transparent conducting thin films have attracted much attention due to its good optical and electrical properties compared with ITO films, high chemical and mechanical stabilities make it suitable for a variety of applications such as gas sensors, flat panel display electrodes and solar cells etc. In this work, the Al-doped ZnO films were deposited using pulsed laser deposition technique. The influences of deposition parameters and Al-doping concentrations on the ITO glass substrate and glass slide substrate. Morphologies and electrical properties of the films were investigated. The main results are as follows:1.We have prepared highly c-axis oriented AZO on ITO glass substrate and glass slide substrate at different growth condition, such as substrate temperature, oxygen partial pressure. When the temperature is lower, the AZO thin films can’t crystallize. It can’t crystallize for too high or too low oxygen partial pressure.2.The surface structure of glass slide substrate films went done with the increase of temperature, The surface structure of ITO glass substrate films have no obvious change. Compared with glass slide substrate, roughness of ITO glass substrate is more.3.The resistivity of films is reduce first and then increase with the increase temperature. When the temperature is200℃, oxygen partial pressure0.8Pa and 2.0Pa, the films film shows the wurtzite structure with hexagonal symmetry and exhibit highly c-axis on the ITO glass substrate and glass slide substrate. The films have the lowest resistivity7.9×10-4Ω·cm and8.2×10-4Ω·cm. Optical transmittance is around84%in the visible region. Band gap is about3.62eV.