Research On Performances Of Nanostructures And Devices Based On Zinc Oxide And Gallium Oxide

Zinc oxide (ZnO) is a kind of semiconductor material that belongs to II-IV group with a wide band gap. It has comprehensive applications in the optoelectronic field, such as light-emitting diode and laser diode. There are two main problems which are extant in the research of ZnO nanomaterials and devices, including the preparations of/?-type ZnO and high voltage threshold of ZnO diode.This paper was replete with experimentals in order to solve the two problems above. The successful fabrications of p-type ZnO with high crystal quality and ZnO diode of p-n junction with low voltage threshold were achieved. Meanwhile, there was an investigation on gallium oxide (Ga2O3) nanomaterials which have a significant application to the ultraviolet detector.There were several conclusions and achievements that have been accomplished by this paper in the following.(1) The p-type ZnO arrays with high quality and perpendicular growth direction were prepared by the hydrothermal method. The optimum growth temperature and concentration were90℃and0.02mol/L zinc acetate, respectively. The length of p-type ZnO nanowires was controlled through adjusting the growth time.(2) The luminescence from free exciton (3.310eV) was observed in the low-temperature photoluminescence spectrum of ZnO nanowires doped with phosphor, which is an evidence of the p-type material.The p-n junction of ZnO was fabricated and the current-voltage curve was measured. This junction represented excellent rectifying characteristic of low voltage threshold (1.0V).(3) The Ga2O3nanomaterials with high crystal quality were synthesized by chemical vapor deposition method. The most appropriate growth temperature and argon flux are1100℃and100seem, respectively.The chemical element composition and crystal phase composition of the Ga2O3nanoflags are measured by energy dispersive X-ray spectroscopy and X-ray diffraction equipment, respectively. It was proved that the Ga2O3nanoflags owned high purity and quality.The scanning electron microscopy images of Ga2O3nanostructures expressed that the growth process complied with the VLS mechanism.(4) There was a sharp absorption edge (approximately270nm) in the absorption spectrum of Ga2O3nanoflags, which implied that it played a potential application in that ultraviolet detector. The photoluminescence spectrum of Ga2O3nanoflags with a main violet peak represented that it made latent contributions to the violet emitter.A novel device with the structure of Au/ZnO:P nanowires/Ga2O3nanoflags/In was fabricated and its Ⅰ-Ⅴ curve proved that it was a sort of Scotty junction.