Computational Fluid Dynamic Simulation Of The Reactor For GaN Growth By HVPE

GaN is a core material for semiconductor industry owing to its excellent optoelectronic properties and good prospects for its wide application. Hydride Vapor Phase Epitaxy (HVPE) method has been widely used for its industrial production because of the high growth rate. In this work, the scale-up of the HVPE reactor with a ring-like gas inlet is studied and the influence of inlet diameter of GaCl, inlet diameter of N2, diffuse height and the diameter of substrate is investigated by CFD by analyzing the distribution of gas concentration and the rate of GaN growth. Results show that an optimized yield of10%for GaN can be obtained with the surface deposition rate of GaN up to150μm/h and the uniformity of GaN layers is about0.94in a reactor with a size of3*2inch. When scaled-up from3*2inch to6*2inch, the effect of whirlpool inside the reactor can be successfully eliminated by adding an embedded nitrogen airway tube. In a reactor with a size of6*2inch, a yield of8%for GaN can be obtained with the surface deposition rate of GaN up to100μm/h and the uniformity of GaN layers is0.85after the diameter of the embedded nitrogen airway tube, the mass flow of GaCl and N2in embedded airway tube and the mass flow of NH3and N2outlet of GaCl have been optimized.