Growth Behavior Study Of GaN/Graphere Made In Double-Chamber CVD System

Research and application of GaN and graphene are hotspots all over the world. Onone hand, it is because GaN is the third generation semiconductor materials in makingmicroelectronic and optoelectronic device. On the other hand it is because graphene is a"super" material with high strength, high conductivity and high transmission. Thecombination of graphene and semiconductor will bring graphene a much broaderapplication prospect. And the research of semiconductor/graphene composite system is ofimportance. The GaN/graphene composite system were grown by a double chambercomposite CVD system, which is independently designed. This paper is aimed to explorethe growth behavior of GaN on graphene. More details are organized in the followingsequence.Chapter1introduces the structures and properties of gallium nitride and graphene.The main growth methods including MOCVD, HVPE, MBE were described as well as themain characterization techniques including SEM, TEM, Raman, XRD. The significance ofthe research on GaN/graphene composite system is proposed.Chapter2introduces the details of double chambers composite CVD system built forgrowing wide band nano-structure films. The chambers, gas path, peripheral equipmentwere discussed.Chapter3described the growth of graphene on the copper foil with the CVD methodunder low-pressure conditions. Then we completed the transfer. According to thecharacterization results, the numbers of graphene layers are mainly1to2. Twoexperimental methods were explored for transferring the graphene.The fourth chapter described the growth of GaN films on MO-GaN, sapphire, quartzsubstrates with or without graphene interlayer by using HVPE technology. The growth behaviors of gallium nitride on each substrate were characterized by SEM, XRD. Thecharacterization results show that GaN films prepared on MO-GaN substrate with orwithout graphene interlayer were of high quality. But the GaN films prepared on sapphireand quartz are polycrystalline structure without optimized growth parameters.