| Vanadium oxides thin film is a kind of thermistor material with excellentproperties, and in many technology fields it has much broad application prospects,which has become one of the research hotspots in the field of functional material athome and abroad. In this paper, we present the preparation of the thermo film andcharacteristics which is used in the uncooled infrared detector. Combining with thevacuum heat treatment, we adopted the inorganic sol-gel method to prepare thehigh-performance vanadium oxide thin film which was grown on the glass slidesubstrate. The main research contents are as follows:(1) We have studied the influence of the vacuum heat treatment temperature onthe the electrical properties and the phases, as well as the morphology. With theincrease of vacuum heat treatment temperature, the ambient resistance of the filmdecrease gradually, but the value of the TCR increases at first and then decreases. Thecomposition of the V2O5in the thin film also decreases. However, the composition ofthe VO2(B) seems to be increased. The thin film defects also become less, theuniformity becomes better.(2) We have also studied the influence of the vacuum heat treatment time on thethe electrical properties and the phases, as well as the morphology.With the extensionof vacuum heat treatmet time, the room temperature resistance and TCR value of thefilm all showed a gradual decline trend. It is helpfull to the generation of the VO2(B),but if beyond a certain time, the vacuum heat treatment time would not only have noobvious effect on the room temperature resistance and TCR value, but also it appearsexcessive reduction vanadium oxide at a low price generates.The uniformity of thethin film also become worse.(3) We have discussed the influence of doping concentration of the molybdenum ion and the niobium ion on the electrical properties and the phases, as well as themorphology. With the improvement of the doped concentrations of the Mo ion and Nbion, for the vanadium oxides thin film after the processing under different vacuumheat treatment temperature, the resistance-temperature curve and the TCR valuecurve is not exactly the same changed trend, but the doped concentrations has almostno influence on the film phase. They just have slightly offset in difference on theXRD spectrum line. The thin film grain size becomes smaller, and the surface appearsmore defects(4) For the vanadium oxides thin film of the doped1%Mo and1%Nb, we havestudied and discussed the influence of the vacuum heat treatment temperature on theperformance and the film phase, as well as the morphology. And we found that withthe increase of vacuum heat treatment temperature, the room temperature resistanceand TCR value both gradually reduced, and it is helpful to the generation of theVO2(B). But, with the increase of temperature, it is also prone to appear someimpurity phase, so less the film defects.(5) We have synthetically discussed the influence of the vacuum heat treatmenttemperature and time on the properties of vanadium oxide thin films, and found thatthe vacuum heat treatment temperature has a much more effect than the the vacuumheat treatment time. The influence of the doping concentration of the molybdenumion and the niobium ion on the film properties is also synthetically discussed. Theresult showed that the doped thin film has a better characteristic than the undoped thinfilm, and the thin film doped molybdenum ion has a better performance than the thinfilm dopend niobium ion.In this paper, we have prepared the best electricalperformance thin film which is quite suitable for the uncooled infrared detectortemperature sensor, and the TCR value was-2.88%/K, the square resistance value atroom temperature was6.67K Ω. |
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