Investigation On The Energy-storage Performance Of Antiferroelectric Thick Films Fabricated Via Screen-printing Method

The high energy-storage density, high energy-storage efficiency, and fast charge-discharge are always designed in the application of the high power density large-capacitor. Compared with the ferroelectric and linear dielectric materials, the anti-ferroelectric materials usually possess a huge energy storage and release, during the AFE-FE phase transition under the function of external field. Thus AFE materials are more suitable for application in high power-density in capacitors.In this paper,(Pb1-3x/2Lax)(ZryTi1-y)O3antiferroelectric (PLZT AFE) thick films were successfully fabricated on alumina substrates via screen printing method. The phase structure and the surface morphology of the PLZT AFE thick films were analyzed by XRD and SEM, respectively. Dielectric constant, the breakdown strength (BDS) and electric hysteresis loops (P-E) of the PLZT AFE thick films were measured by Precision LCR Meter and Ferroelectric tester system, respectively.The effect of sintering temperature and sintering atmosphere on the microstructure, electrical properties and energy storage performance were investigated in detail. It is found that the PLZT AFE thick films sintering at850℃and in PbO rich atmosphere possess good AFE propertied, which lead to the improvement in energy storage density and efficiency.In order to improve the thick films densification, additives oxide, PbO, ZnO, MgO and low melting point PbO-B2O3-SiO2superfine glass powders were introduced into the PLZT AFE thick films. The results showed that the sintering additives and low melting point PbO-B2O3-SiO2superfine glass powder could enhance the density of thick films and increase the BDS value, while dielectric constant of the AFE thick films were reduced. Comparably the addition of glass was an efficient to optimum the energy-storage performance of AFE thick film. It was finding that the addition of3wt%low melting point PbO-B2O3-SiO2glass powder could improve the energy-storage density from1.47J/cm3to3.12J/cm3about2.1times.On the above basis, this paper also studies of the La content and thickness influences of the energy-storage behavior. It is found that higher La content lead to slime hysteresis loops, and decline the dielectric constant of the thick film. As the increasing of thickness, the dielectric constant became larger, while the BDS values were declined. Thus proper control of La content and the thickness of AFE films were also important to realize acceptable energy-storage performance.