Study Of Energy Storage Behavior And Application Of PbZrO₃ Film Capacitor

Antiferroelectric material becomes a hot research, because it plays an increasingly important role in modern high-tech.But PbZrO₃ group antiferroelectric material having a composite perovskite structure is a class of the most promising antiferroelectric materials.The preparation technology and energy storage properties of PbZrO₃ based antiferroelectric thin film capacitor doped ion have important theoretical significance and application value.In this thesis, PbZrO₃（PZO） based antiferroelectric thin films were prepared by using a chemical solution deposition（CSD） method combined with a rapid thermal annealing（RTA） process, and the doping modification, phase transition, antiferroelectric, dielectric, energy storage properties of these thin films were studied.The Pb_1-1.5xPr_xZrO₃（PPrZ） thin films with different Pr³⁺ contents were prepared on Pt/Ti/Si-O₂/Si substrates by using a chemical solution deposition method combined with a rapid thermal annealing process, and the microstructure morphorlogies, energy storage, and electrical properties of these PPrZ were studied. All of these PPrZ thin films crystallized in a pseudocubic perovskite phase, and showed dense, crackless surfaces. Doped with different concentrations of Pr³⁺ ions on the electrical properties of the antiferroelectric film PbZrO₃ tremendous impact, it can be obtained by varying the ion concentration of lead zirconate different electrical properties of film sample reservoir.Our study suggests that suitable Pr-doping is an effective way to improve the electrical properties of the PbZrO₃ thin films. The Pr-doped PbZrO₃ thin films with a high energy storage density can find applications in high energy storage capacitors.Finally, studies the new energy storage capacitor high density storage capacitor in the military field, the hybrid vehicle, biomedical potential application on Things underlying sensor network node. Which focuses on the PbZrO₃ antiferroelectric thin film capacitor of the things underlying supply node sensor network applications.As analyzed in the thesis, there are still a lot of improvement space for the fabrication process,and much conditions can be further optimized to get better PbZrO₃ antiferroelectric thin film capacitor. At the end of this thesis, the full content is summarized, and some suggestions are put forward for further experiments.