Structural Design And Compatible Research Of Junction Semiconductor Bridge

The initiation mechanism of junction semiconductor bridge (SCB) was analyzed in this paper, and the influencing factors of electrical-explosion performance were discussed. The package structure was designed according to the structural characteristics of junction SCB, and the static and RF protective effects were studied. The research contents and conclusions are as follows:(1) The breakdown voltage of junction SCB was determined by the doping concentration of N-type silicon substrate. The lower the doping concentration is, the higher the breakdown voltage is. The parasitic resistance, static resistance, capacitance and other parameters of junction SCB are not only affected by the doping concentration, but also by the sizes of chip and electrode.(2) Under the capacitor discharge, high-doping junction SCB whose breakdown voltage is about10V is not ignited, while the middle and low doping SCB whose breakdown voltage are about35V and150V can fire. The higher the breakdown voltage is, the better the firing effects are.(3) At the same positive electrode, the larger the chip size is, the less concentrated bridge energy is. It is not conducive for the junction SCB to fire. The area of the reverse biased PN junction is affected by the electrode size. The larger the area is, the more difficult to stimulate. The higher discharge capacitance means to the larger energy, and it is conducive for the junction SCB to fire.(4) The initiation process of the junction SCB can be divided into three stages:①the reverse breakdown of PN junction;②the accumulation of the junction;③plasma generation. The ignition of junction SCB needs two conditions:①the input voltage is higher than the reverse breakdown voltage of PN junction;②the sufficient energy accumulation in junction area. The atomic emission spectroscopy measurement system tests the plasma during the firing progress of junction SCB.(5) It is shown that junction SCB has a good electrostatic protection capability. Electrostatic effect breaks down the junction SCB, and the junction SCB states from a high impedance into a low resistance. But because of the small capacitor discharge time, the discharge energy is not sufficient to damage the junction area. After electrostatic discharge (ESD), the junction SCB can be normally ignited.(6) Junction SCB has a good RF protection capability, and the RF protective effect can be further enhanced by reducing the parasitic resistance, improving heat exchange capacity of the chip and the environment.