Development Of A Surge Protection Device

Semiconductor protection device is a new type of Transient Voltage Suppresser(TVS). It is widely used in protecting communications equipment from surge striking because it has a high-speed response, small size and a high surge handling capability.The operational principle and the fundamental structure of the semiconductor protection device is equal to that of the thyristor—most of the semiconductor protection device is a two-terminal and four-layer (PNPN) device and can turn on fast depending on avalanche breakdown or gate current, so as to protect the communications equipment in the case of high transient surge.In this thesis, the theory of voltage suppressor is introduced in details.By the theory,the process parameters and the construction parameters have been designed for the electrical characteristics of LT62090.And based on the experiments and process results, We systematically discussed the connection how the process parameters and the structure parameters affect the electrical characteristics of the device.And finally ,the test results show that the device characteristics agrees to the design aims.