| The silicon solar cells has become one of the mainstream direction of new generation of solar cells,owning to its low cost, mature manufacture technology,monocrystalline silicon solar cells’high transfer efficiency, long lifetime,and A-si flim cells’s material manufacture technology relatively simplify.However,its property is effected by semiconductor material’s defects.If some detrimental impurity or crystal defect level induce deep level in forbidden band of semiconductor material,It is of very important significance that learning the essence of deep level defects and control its concentration in the process of semiconductor material’s growth,process and preparation for improve the yield of cells. DLTS technology is one of tranditional, brief, and efficient way in the process of research semiconductor materials.In the present work, the C-T curves of multicrystalline silicon solar cells have been tested by DLTS test system, which is built by rapid capacitance meter (Booton7200), temperature controlled cryostat, and digital phosphor oscilloscopes(Tektronix DPO7104C). After many calculations and measurements, four obvious peaks in DLTS spectra have been obaerved at different temperatures(130K,164K,226K and271K)when reverse bias(-400mV) has been added on both ends of the cells. In addition, DLTS spectra vary with the different reverse bias.Arrehnius straight line graph referringTo deep level defects of multicrystalline silicon solar cells has been shown and the relevant information of defect level in deep level of multicrystalline silicon solar cells. |
