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Broadband Gap Gallium Oxide Of Nanobelts, Preparation, Optical Properties And Anisotropy Of The Research

Posted on:2012-11-29Degree:MasterType:Thesis
Country:ChinaCandidate:Z SunFull Text:PDF
GTID:2241330371965196Subject:Condensed matter physics
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Low-dimension-semiconductor materials, like nanotube, nanowire, nanobelt, etc, have a wide application in nano device, photon-electron device, micro-sensor, etc, because of their special physical and chemical properties. Due to the various physical contents and the expectation of the application, they had been thought highly. A lot of attention has been paid on the low-dimension-semiconductor materials especially in two aspects:1. How to synthesizing different shaped low-dimension-semiconductor in simple ways.2. Investigating the optical properties and conduction properties etc. In my thesis, I did research about the optical properties of quasi-two-Dβ-Ga2O3 nanobelt by using multi-resolved-spectrometer (space, time, spin, etc.). The main contents include three parts.The first part is the introduction about the synthesizing of the sample by carbothermal reduction without catalyst. Theβ-Ga2O3 nanobelt we get has the length of several hundred micrometers, width of several micrometers and thickness of 100-200 nanometers. Then I character the sample by using SEM, TEM, SAED and XRD.The second part is about the investigating of temperature-dependence and power-dependence photoluminescence spectrum with the help of using co-focal micro-spectroscopy system. In addition, I try to explain the mechanism of emission of a singleβ-Ga2O3 nanobelt and the origin of the 26 meV blueshift.The third part is about the polarization-dependence Raman scattering of a singleβ-Ga2O3 nanobelt.I will analyze and explain the mechanism of electrical anisotropy inside the sample.
Keywords/Search Tags:Low-dimension-semiconductor materials, β-Ga2O3 nanobelt, polarization-dependence, Raman, co-focal micro-spectroscopy system
PDF Full Text Request
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