The Preparation Of Tin Dioxide Nanopores And Its Performance Study

Wide bandgap N-type semiconductor materials, tin oxide with its uniqueperformance for the catalyst, mordant, the preparation of glass has been widely used.With the rapid development of nanotechnology, because of the unique optical andelectrical properties of nanotechnology, tin oxide functional materials and excellentphotosensitive gas sensitivity and other characteristics of solar cells, hydrogen storagematerials, gas sensing devices has great value and market potential. Therefore, thepreparation and properties of functional materials for nano tin dioxide material isalways today’s hot topics.In this paper, nano tin oxide materials were prepared by anodic oxidizationmethods. And the performance and adsorption mechanism of the tin oxidesemiconductor material was carried by scanning electron microscopy （SEM） and X-raydiffraction patterns （XRD） for samples with different voltage, anodic oxidization time.By comparing the three experimental solvent as the anodic oxidation of the electrolyte,the different experimental conditions, the surface structure of SnO₂was studied. We canfind from experiment that when the electrolyte was oxalic acid, characteristics of SnO₂nanopores were better than the other two SnO₂nanopores prepared by the other twoelectrolyte preparation. For oxalic acid anodic systems, the optimized experimentalconditions were anodic voltage （5V）, the concentration of oxalic acid （0.5mol/L）, theoxidation time （5minutes）.In order to combined with MEMS technology and developed the application of tinoxide as gas sensor. Samples of SnO₂nanopores prepared by anodized the Sn mentalfilm deposited by vacuum evaporation method on glass substrates. Through the analysisof experimental data, when the experimental conditions was anodic voltage5V, oxalicacid concentration（0.3mol/L）, the oxidation time（10minutes）, sample surfacecharacteristics is the best, and separate the tin metal anodizing experimental conditionsa slight deviation. Finally, the working principle of semiconductor gas sensors was given combinedwith tin oxide nanofilm. Structure of the sensor designed in this paper was simulatedusing MEMS physical modeling software Intellisuite process simulation to determinethe feasibility of the actual process.