45MHz~2.5GHz0.18μm CMOS Wideband Low Noise Amplifier Design

Wideband system becomes more and more attractive because of its intuitiveadvantages such as high transmission data rate, low power dissipation. However, theproducts in the wireless market are focused on high-frequency wideband system, and stillnot so much wideband. With the continuous development of IC technology, it’s possible torealize low-frequency wideband system, where wideband LNA as one of important blocksin FEM (Front-End-Module) deciding the specifications of receiver becomes necessity.This paper presents the design of45MHz~2.5GHz wideband receiver front-end i.e.gain-controllable Low Noise Amplifier. Beginning with the wideband system design, thespecs of LNA are based on the analysis and derivative of the ones of wideband receiver.Then the detailed design process of LNA circuit, layout.Wideband LNA is designed using TSMC0.18μmμm RF CMOS technology.According to the simulation results from45MHz to2.5GHz, the gain and NF of LNA is18dB~12.7dB,1.4dB~2.43dB respectively, leaving AGC standby. Return Loss(-15dB~-7.5dB) and IIP3also meet.The gain of LNA is controlled by AGC from-30dB to18dB. The current dissipation of this LNA is15mA at1.8voltage supply.