Design Of A Fully Integrated Broadband Low Noise Amplifier In CMOS

Nowadays,wireless communication has developed into a communication technology with multiple standards covering multiple frequency bands.The RF front-end system requires higher bandwidth for being compatible with multiple frequency bands.The low noise amplifier(LNA)directly affects the performance of the entire RF receiving system as the first active module of the RF receiver.This thesis studies and introduces the design of broadband low noise amplifier from the perspectives of device type,device structure,noise model,bias circuit,passive device,and wideband matching.This thesis has designed circuits with EDA and verified related theory by tape-out finally.The main work and innovations are as follows:(1)The performance of different types of capacitors in CMOS 65 nm process is studied.The Q value and capacitance density of MOM capacitors and MIM capacitors are compared,and their respective advantages and disadvantages are obtained.Proposed a solution for capacitor selection(2)Studying the effect of feedback resistance on noise and matching in the resistor feedback current multiplexing structure.The selection method of transistor size and the selection method of feedback resistor are proposed.(3)A new low-noise amplifier structure is proposed,which is a two-stage LNA designed with inverter cascading and resistance negative feedback self-biasing technology to achieve high gain and good broadband matching with low noise figure.(4)Based on the above research,a broadband low noise amplifier chip suitable for multi-band communication based on 65 nm CMOS technology is designed.The 3dB bandwidth reaches 4.5GHz(0.5GHz-5GHz),S11 and S22 <-10 dB in 3dB bandwidth,the maximum voltage gain(S21)in the band is >20dB,and the noise figure(NF)is <3.5dB.The OP1 dB at 2GHz is >0dBm.The performance of the LNA designed in this thesis meets the application of the mid-band scene of the 5G communication standard.The results have certain research significance and industrial value for studying broadband low noise amplifiers.