| Nowadays the function of the integrated circuits is becoming more and more powerful and the circuit thermal problem is getting worse. As is known to us all, the heat of the semiconductor device is playing an important role in IC thermal problems. If the influence of hot issues for circuit electrical properties can be identified, the circuit performance can be estimated in the simulation stage. This estimation is non-ideal circumstances, considering the impact temperature field on circuit performance, making more practical significance for the simulation of the circuit system. The main chapters of the paper are focused on semiconductor devices thermal problem.In the dissertation spectral-element time domain method (SETD) is used, which is a special form of the finite element method. The main difference is the basis function. The spectral-element time-domain method is employed to analyze the electrothermal characteristics of the semiconductor device.Firstly, the basic theory of spectral-element time-domain method is introduced in the dissertation. Then thermal secondary effects of the PIN diode under high-power is analyzed.And then the potential of the CMOS in the steady-state case is simulated. Finally, the model of the insulated gate FET circuit is established. And this model is used to simulate the most simple inverter circuit. |
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