Efuse Circuit Design Application In The Wide Voltage Range

In order to improve the yield in integrated circuit fabrication, to void losing efficacy of the entire circuit caused by device failure, engineers introduced redundancy technology which based on fuse technology. Due to its advantages such as scalability, low cost, smaller size, and be configurable after packaging, efuse have taken replace of traditional metal fuses, and becoming a research hotspot in the field.This paper first summarized the current research status of efuse, analyzed all the parameters which affect the performance and structure of efuse. Taking advantage of output voltage of Low-dropout Linear Regulator (LDO) not changing along with the power supply voltage, we designed an efuse memory circuit which can be applied to a wide range of voltage by combining LDO with efuse storage unit. Based on this, the overall and the key circuits have been simulated to verify their parameters. Finally, the circuit taped out and tested in SMIC65nm low leakage CMOS technology.The test results show that, when the power supply change from2.5V to3.6V, the output of LDO(the program voltage of efuse) is stable at2.1V to2.3V, which matches the program condition of efuse. After programming, the resistance of all efuse rise above to105Ω. It is large enough for the sensitive amplifier to output correctly.