The Application Analysis Of LDMOS Power Devices In P Band Radartransmit System

Modern radar systems for military applications place new requirements on RF power amplifiers due to the desire to reduce system size, weight, and improve system reliability. Compared with vacuum tubes, solid-state power amplifiers have some merits, such as high reliability, long life, low operating voltage and soft failure, and thus, they have been used more and more widely in modern radar systems.LDMOS transistors have being played a leading role in the solid-state power amplifiers in transceivers of radio communication since they have been used. Compared with other solid-state devices, there are some other advantages of LDMOS transistors, such as good linearity, high gain, high efficiency and good thermal-stability. Due to the rapid development of semiconductor technology in recent years, LDMOS device performance has achieved an increasing promotion, therefore, they are been used more and more widely in radar applications.In this paper, the performance characteristics and advantages of the LDMOS devices are analyzed in detail. A P band300W LDMOS power amplifier was developed with the LDMOS power devices. The performance test of the amplifiers was carried out, which showed that compared with silicon bipolar power device, the performance of Radar transmitter can be improved with the application of the LDMOS power devices. It also summarizes some of the factors effecting the application of LDMOS in radar. The research has some reference value to the application of follow-up LDMOS devices in radar field.