Studies On Preparation And Properties Of GaSb-base Schottky Device

III-V compounds have the wide range of band gap, high carrier mobility. Most of their band structures are Direct transition type. Ⅲ-Ⅴ compounds are easy to form ternary and quaternary alloys. So Ⅲ-Ⅴ compounds are applied on micorowave, space, infrared, imaging, photoelectricity, etc. GaSb is a main material in Ⅲ-Ⅴ compounds. While Schottky device is a important kind of Infrared detectors. Above all, the reserch of GaSb-base Schottky device is significant.Etching and sulfuring are equally important process during the surface sulfur passivation of gallium antimopnide (GaSb) In this work, we described the effects of etching by certain proportion of bromine methanol solution instead of hydrochloric acid solution (acidification), which could lead to a improvement of surface passivation homogeneity of GaSb. The photoluminescence (PL) spectra and the atomic force microscope (AFM) morphology on GaSb are also indicated a good surface morphology.Au film (200nm) is deposited on Te doped n-GaSb grown to form metal/semiconductor contacts, and these contacts are quickly annealed at200℃-400℃in the ambient gas of N2. It is found that these contacts show rectifying Schottky behavior by Ⅰ-Ⅴ measurement. The characteristic of the contact is improved when annealed under the appropriate temperature. It leaded to increase the barrier height and reduce both the ideality factor and the leakage current.