Preparation And Properties Of InAs/GaSb Superlattices Structres

2.5μm Laser in those two particular band possess the property of lower scattering and absorbability, which have application prospect in spatial point to point communication, ladar and the indication of military target. Presently semiconductor laser that use antimonide as its active material is the most popular way to gain infrared light. There are still some serious questions such as lattice mismatch and stress problems. In the process of martial growth, the lining-up of antimonide will ultimately affect the development of antimonide. Therefore, this paper provides a comprehensive review of research on the homoepitaxial growth of monolayer film and the heteroepitaxial growth of superlattice. We also analyze the features of martials characteristics and then to perform interface control of inside material interface superlattice cycle,and finally to improve the performance of semiconductor ladar.By comparing the experiment result with the image of epitaxial growth imitated by the X’Pert Epitaxy software, By MBE apparatus on GaSb substrate Home-epitaxial growth GaSb single layer. Using XRD, grown GaSb monolayer which is a very sharp peak.GaSb substrate GaSb film epitaxially double-crystal X-ray diffraction rocking cure fitting the same conditions X’Pert Epitaxy softwave simulation map. This result proved a growth good quality film lattice, in order to determine the optimal growth parameters.Using the MBE growth parameters that have been determined the optimum growth the InAs/GaSb superlattice structure cycle respectively 10, 20, 50. The measured X-ray diffraction peaks of actual growth level of the films were 303 arcsec, 198 arcsec, 208 arcsec. Indicates that the InAs/GaSb superlattice with periodic B ultrasound strain increases also with increasing, but the control cycle through the appropriate growth parameters increased interface stress gradually decreased. In the InAs/GaSb interface, the InAsSb buffer layer is inserted, a measured X-ray diffraction peaks 200 arcsec. Insert buffer layer will reduce the density of the superlattice mismatch at the interface. A stable mismatch, low stress InAs/GaSb superlattice structure has been achieved.