Preparation Of N-type ZnO Thin Film On The P-type Semiconductor Si Substrate Constituting The P-n Junction

ZnO is a wide band gap semiconductor material of a group II-VI direct band gap,it havelight and electricity excellent physical properties,So in short wavelength light-emittingdevices、transparent electrodes、 thin film transistor、various piezoelectric devices and otherfields have a broad application prospect.To realize the application of ZnO material in the fieldof optoelectronics,must prepare the good performance of the p-n junction,This topic is locatedin the P type substrate on the preparation of N type semiconductor thin films, and Zinc Oxideheterogeneityp-njunction.In this paper by using sol gel method,preparation of N type ZnO thin films by doping Alelement system,use of X ray diffraction、 scanning electron microscopy、four probe tester testand analyze the prepared doped ZnO thin film samples,Mainly exploration the effect of dopingcontent、temperature and annealing temperature on ZnO thin film’s structure、 surfacemorphology and electrical properties.Select AlCl3as the doping source,Al as ZnO thin filmsdoped,the results show that the incorporation of Al in favor of film (002) preferred orientationgrowth and promote the improvement of crystallinity.Al doped ZnO thin film thickness of theprepared for about300nm.At the concentration of4%、pretreatment temperature of110℃、550℃annealing temperature is selected as the best performance, the film has highcrystallinity、resistivityreached0.0026Ω· cm、plane resistanceof2300Ω/□.Using solvent-gel doped aluminum Zinc Oxide thin films prepared by sol-gel method atresistivity were1Ω· cm and0.001Ω· cm P type Si semiconductor substrates,N-ZnO/p-Siheterojunction at the contact surface, using of X ray diffraction、 scanning electronmicroscopy、four probe tester test and analyze the prepared doped ZnO thin film samples,Itwasfound that thesubstratehaslittleeffecton thepropertiesof thin films.In sputtering thin filmsurfaceAu electrode,p-npropertiesofsamples.Theresultsoftwo samples ofsurface, substrate preparation have good rectifying properties,the forward turn-on voltage are in thevicinity of0.7V,When the reverse bias reverse bias current is small,and when the substrate is0.001Ω· cm sample in45V reverse breakdown,the substrate is1Ω· cm reverse breakdowncharacteristicsin70V,bettercharacteristics of p-n.