| As the compound of the elements Si,C and N,as a new wide bandgap semiconductor material,SiCN combine the feature of SiC(silicon carbide),C3N4(carbon nitride)and Si3N4(silicon nitride)in optical,electrical,mechanical and other aspect.The SiCN grown on the silicon substrate is cheap and compatible with the existing integrated circuit technology.Different composition and structure of the SiCN materials have the continuous tunable band gap ranges from 2.86 to 5.0 eV,which is benefit to the field of optoelectronic devices(such as light-emitting diode,semiconductor laser)applications.With the magnetron sputtering,we use the silicon nitride(Si3N4)target and the graphite(C)target as raw materials,the SiCN films were prepared and then annealed.By altering the annealing atmosphere,holding time,annealing temperature and other conditions to explore the annealing influence on SiCN film composition,surface morphology,chemical bond,crystal structure and photoluminescence and other characteristics,optimizing the annealing process,to improve the crystallinity of the films,so as to get the SiCN film with excellent photoelectric properties.XPS analysis shows that SiCN thin film is not a simple combination of Si3N4 or SiC or Si,C and N,but a complex network structure of C-C,C-O,C-N,N-Si,C=N,Si-C,Si-O and Si-N.Meanwhile,XRD analysis showed that the films contained Si3N4 and 5H-SiC phases.The samples annealed under vacuum conditions show a better crystallinity than those annealed in air and argon atmosphere.The SiCN films prepared by magnetron sputtering showed that the films had good crystallinity when the C target power was 100 W and the power of silicon nitride target was150 W,and the SiCN thin films prepared by the process were annealed.It is found that in the vacuum and argon atmosphere,with the increase of annealing temperature,the content of Si elements in the film increases obviously,and the content of C and N elements decreases.The photoluminescence of the samples was explored.The different annealing atmospheres caused the luminescence peaks at different positions of SiCN films.The photoluminescence peaks of the films were mainly at 370 nm and 395 nm after annealing in air atmosphere.The peak of luminescence in the argon atmosphere was mainly 370 nm,and the emission peaks in the vacuum atmosphere were mainly at 370 nm and 410 nm.The 370 nm luminescence peak is derived from the SiOx luminescence center,and the luminescence at the 395 nm and 410 nm is caused by the carbon cluster. |
