Investigation In Synthesis And Properies Of Two Dimensional Gallium Family Semiconductors

Two-dimensional semiconductor nanostructures, with decresced dimension andsize show some particular and properties of light, electronic, magnetic and thermologybeing different from the corresponding bulk materials, which render a wide rangeapplications in nanoscale electronics and optics. The most widely studiedtwo-dimensional material is graphene, due to its rich physics and its high mobility.However, pristine graphene does not have a bandgap, a property that is essential formany applications, including transistors. On the condition that limitation we followedthe way of graphene and prepared analogues of grapheme including few-layer GaSe,GaS, Ga2O3and GaN as new-type of two-dimensional nanomaterials. This paperdiscussed and analysed in detail about their preparation, properties and applications.On the basis of materials’ demonstrated, this paper is divided into four sections:two-dimensional semiconductor GaSe, GaS, Ga₂O₃and GaN, we discuss theirproperties systematically and get outstanding results as follows:1. Synthesize single crystal GaSe and GaS bulk by high-temperature reaction in thequartz tube and then get the2-D semiconductor mechanical cleavage.Using2-D GaSeas the precursor we produced2-D Ga2O3and GaN by the way of heat oxidation in theair and ammoniation in the NH₃.These2-D materials just are few atomic layer.2.2-D materials GaSe and GaS have obvious electrical and photoelectricityproperties. The electrical characteristics measured in GaSe transistor are predominant,the on/off ration is up to104-106, which is much higher than graphene transistor. Thefield effect mobility of0.01-10cm²/V.s. The conductivity of2D GaSe shows asignificant change during the temperature range of50⁶0K, raising above the60K, anddecreasing below the50K.3.2-D materials GaSe and GaS photodetectors have high sensitivity andresponsivity for the ultraviolet light, the photoelectric response time of below30ms andphoto responsibility of2.2¹0A/W, the external quantum efficiency （EQE） up to1369.2⁴890%.4.For the2-D materials Ga2O3and GaN, this paper mainly investigates thesynthetic method and determines the optimum technological conditions.