Study On One Dimension Gallium Oxide Nanowires Fabricated And Application

As a new kind of wide-bandgap oxide semiconductor material,the bandgap of gallium oxide monoclinic??-Ga₂O₃?is 4.9 eV and promises potential application on high-performance power device.?-Ga₂O₃ materials has excellent electrical and optical properties so that it can be applied in ultraviolet transparent electrodes,solar-blind photodetectors and high-temperature gas sensors.It is a strong impact on the electrical and optical properties of?-Ga₂O₃ materials and devices that crystalline quality,dopants and vacancy defects.By fine control of the growth conditions?such as growth temperature,duration,atmosphere,dopants,etc.?and related growth mechanism,we can get High-quality?-Ga₂O₃ materials for the applications of high-performance device.This paper mainly studies the synthetic of?-Ga₂O₃ nanowires and the impact of growing conditions and catalyst for?-Ga₂O₃ nanowire morphology structure and optical properties,and by constructing different kind of structure of UV photodetectors to explore the photoelectric properties of?-Ga₂O₃ nanowires.By chemical vapor deposition method in this paper,with a purity of 99.999%metal Ga source,for Au catalysts,?-Ga₂O₃ nanowires on the silicon substrate has been prepared,research on the influence of gallium oxide nanowires growth substrate and the growth time for the structure of?-Ga₂O₃;research on the influencing factors the morphology of the Au catalyst and the influence of catalyst morphology for the structure of?-Ga2O3;research on the influence of different morphology of catalyst for the PL of gallium oxide nanowires;the influence of rapid annealing treatment for the PL of gallium oxide nanowire arrays.Our study found that single crystal Si substrate can grow?-Ga₂O₃ in the VLS mechanism,and polycrystalline?-Ga₂O₃ film surface only in a few film defect using VS growth mechanism compound?-Ga₂O₃ nanowires;The diameter of?-Ga₂O₃ nanowire growth on the single crystal Si substrate increased with the increasing of growth time;Sputtering time,annealing time and annealing process can influence the Au catalysts morphology;Au catalysts morphology structure can affect the morphology and luminescence properties of?-Ga₂O₃ nanowires array;Rapid annealing treatment can change the PL of?-Ga₂O₃ nanowire.In this paper,We constructed the different structure of UV photodetectors by using the?-Ga₂O₃ nanowires,and research I-V characteristic of device under the UV light conditions and under the condition of no light.Study found that as the?-Ga₂O₃nanowire arrays growing on the metal surface of Ga directly and then sputtering Au electrode,there has a schottky contact between?-Ga₂O₃ nanowires and Au electrode.Form a vertical self-Powered?-Ga₂O₃ nanowires UV photodetectors;the ratio of Photocurrent and dark current is 10³,and has very high detection sensitivity,and can be self-powered under ultraviolet light conditions.