The Microstructural And Photoelectrical Properties Of Ion Implanted Diamond Films

Researches of the luminescent properties of diamond is the basis of the preparation of single-photon emission. The microcrystalline or nanocrystalline diamond films were prepared by using hot-filament chemical vapor deposition method. These films are implanted by different ion (oxygen, silicon or silicon/oxygen ions) with different doses. The impacts of ion implantation dose and annealing temperature on the microstructure and photoelectrical properties of diamond films were investigated systematically. This work provides meaningful scientific significances and high practical values to the applications of diamond films in quantum fields and electronics industry fields.The influences of oxygen ion dose and annealing temperatures on the microstructural and photoelectrical properties of microcrystalline diamond films with Si-V luminescence centers were systematically investigated. The results show that high temperature annealing prefers to increase the Si-V luminescence intensity in oxygen ion implanted microcrystalline diamond films. With oxygen ion dose increasing from1014cm-2to1015cm-2, the Si-V luminescence intensity of the films enhances. Hall effects measurements show that the resistivity of the films become lower after annealing. Under different annealing temperatures, the oxygen ion implanted microcrystalline diamond films with stronger Si-V luminescence intensity exhibit larger resistivity, indicating that the Si-V luminescence centers is not favorable to enhance the conductivity of films. The results of Raman spectroscopy display that the amount of defects in films increase will enhance Si-V luminescence intensity and decrease the conductivity of the films.The influences of silicon ion dose and annealing temperatures on the microstructural and photoelectrical properties of nanocrystalline diamond films were systematically investigated. The results indicate that the grain size of diamond film less than100nm, and the film is dense and uniform. The silicon ion implantation causes stress changes of stress in the film. High temperature annealing will lead to increase the degree of ordered graphite phase and the formation of more ordered graphite phase clusters. We can not find the Si-V emission peak in the PL spectrum. Hall effects test results illustrate that the silicon ion implantation annealed samples show good n-type conductivity. The magnitude of the mobility of the film is in the range of57.5-295cm2V-1s-1and the carrier concentration is1012cm-2. Appropriate increase in the annealing temperature is favorable to enhance the electrical properties of the films.In this study, silicon and oxygen ion were co-implanted into nanocrystalline diamond films and the effects of ion beam dose and annealing temperatures on the microstructural and photoelectrical properties of nanocrystalline diamond films were systematically investigated. The results show that high temperature annealing can restore the damages caused by ion implantation. We can not find the Si-V emission peak in the PL spectrum. Hall effect test results illustrate that the silicon and oxygen ion co-implanted samples exhibit n-type conductivity. The magnitude of the mobility of the film is in the range of3.11-3.98cm2V-s-1and the carrier concentration is1013cm-2. Appropriate increase the dose of the oxygen ion implantation in silicon and oxygen ion co-implanted samples will enhance the electrical properties of the films.