Quasi-one-dimensional ZnM(M=O, Se) Nanostructures：Controlled Synthesis And Optoelectronic Devices Application

The outstanding electrical and optical properties of quasi-one dimensionalnano-semiconductor materials have aroused a vast concern all over the world. Group II-VI of thezinc oxide (ZnO) and zinc selenide (ZnSe) is particularly noteworthy.1. ZnO nanostructureIn this dissertation, a comprehensive study on the synthesis ZnO nanostructures wereperformed using vapor deposition approach. The as-synthesized nanowire, nanorod arrays andnano-thin film were characterized by field-emission scanning electron microscope (FESEM),EDX energy spectrum, high-resolution transmission electron microscope (HRTEM), andphotoluminescence (PL). Meanwhile, Schottky barrier diode based on ZnO nanorods (ZnONRs)array and a layer of transparent monolayer graphene (MLG) film was fabricated throughmicro/nano processing technics. The electronic, optoelectronic properties of the fabricated devicewere systemlly investigated.2. ZnSe nanostructureThis thesis systematically studied the synthesis of p-ZnSe nanowires by employing Sb elementas dopantvia a thermal evaporation method. The morphologies phase and composition of theas-synthesized ZnSe nanowires characterized. In order to further study the electrical and opticalproperties of ZnSe nanostructures, p-type field effect transistors, UV photodetector, solar cellbased on ZnSe nanostructures were fabricated. At the same time, the influence of devicestructures on the electrical and optical of ZnSe nanostructures was studied.