Optoelectronic Characterization Of Individual ZnO Nanowire

One-dimensional nanomaterials are one of the most active fields in the research of nanomaterial. Because of one-dimensional ZnO nanomaterials’unique properties, such as ultraviolet radiation performance、surface polarization energy、thermal stability and high chemical stability and so on, they have shown great potential for applications in nanooptoelectronic devices and other fields.In my study, micro-grid template method is used to fabricate micro-electrode of ZnO nanowire, and we study the optoelectronic characterization of individual ZnO nanowire. Some results are obtained:We investigate fabrication method for ZnO device micro-electrode——The micro-grid template method. It is a low-cost and easy fabrication method. With preparation techniques gradually established, the success rate of Ohmic contacts between metal micro-electrode and ZnO nanowire is greatly improved, which provides a reliable method to fabricate electrode for detecting the electric performance for ZnO nanomaterial.Making use of ZnO nanowire prepared by chemical vapour deposition on Si substrate, according to metal semiconductor contact theory as well as our laboratory actual condition, we selecte the material Ti/Au for fabricating micro-electrode. We fabricate micro-electrode of ohmic contact by micro-grid template method and study its optoelectric characterization.We investigate the photoresponses of an individual ZnO nanowire under different frequency LEDs and laser as excitation sources. We find that the conductance of ZnO nanowire is extremely sensitive to UV illumination while it is nearly not changed when ZnO nanowire is exposed to visible light. The characteristics of the photoconductivity ZnO nanowires suggest that it is a good candidate for optoelectronic switches with the dark insulating state as“OFF”and the UV-exposed conducting state as“ON”. ZnO nanowires could be useful for nanoscale optoelectronic applications.Using micro-grid template method, we fabricate back-gate field effect transistor and measure the current voltage property. Experimental results show that gate voltage could control current between source electrode and drain electrode.